A 60-dB Gain OTA operating at 0.25-V power supply in 130-nm digital CMOS process

Author

Ferreira, Luis H. C. ; Sonkusale, Sameer R.

Author_Institution

Syst. Eng. & Inf. Technol. Inst., Fed. Univ. of Itajuba, Itajuba, Brazil

fYear

2014

fDate

1-5 June 2014

Firstpage

1881

Lastpage

1884

Abstract

This paper presents a high gain bulk-driven Miller OTA operating at just 0.25-V power supply in a 130-nm digital CMOS process. The amplifier operates in weak-inversion region with input bulk-driven differential pair with negative resistance source degeneration. In addition, distributed layout configuration is used for all transistors to mitigate the effect of halo implants for higher output impedance. Combining these two approaches, we experimentally demonstrate a high gain of over 60-dB with just 18-nW power consumption from 0.25-V power supply.

Keywords

CMOS analogue integrated circuits; negative resistance; operational amplifiers; digital CMOS process; distributed layout configuration; gain 60 dB; halo implants; high gain bulk-driven Miller OTA; input bulk-driven differential pair; negative resistance source degeneration; output impedance; power 18 nW; size 130 nm; voltage 0.25 V; weak-inversion region; CMOS integrated circuits; CMOS process; Impedance; Layout; Power supplies; Transconductance; Transistors; Bulk-driven Miller OTA; halo-implanted transistors; low-power applications; low-voltage; weak inversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865526

Filename

6865526