Multi-scale simulations of metal-semiconductor contacts for nano-MOSFETs

Author

Aldegunde, Manuel ; Kalna, Karol ; Hepplestone, S.P. ; Sushko, P.V.

Author_Institution

Electron. Syst. Design Centre, Swansea Univ., Swansea, UK

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

4

Abstract

Multi-scale modelling of the electron transport via a metal-semiconductor interface is carried out by coupling ab initio calculations (DFT) with three-dimensional finite element ensemble Monte Carlo simulations. The results for the Mo/GaAs (001) interface show that variations of the electronic properties with the distance from the interface have a strong impact on the transport characteristics. In particular, the band gap narrowing near the interface lowers the interface resistivity by more than one order of magnitude with respect to that calculated for the idealised Schottky contact: from 2.1×10^-8 Ω·cm² to 4.7×10^-10 Ω·cm².

Keywords

MOSFET; Monte Carlo methods; Schottky barriers; discrete Fourier transforms; finite element analysis; gallium arsenide; molybdenum; DFT; Mo-GaAs; band gap; coupling ab initio calculations; electron transport; electronic properties; idealised Schottky contact; interface resistivity; metal-semiconductor contacts; multiscale simulations; nano-MOSFET; three-dimensional finite element ensemble Monte Carlo simulations; transport characteristics; Computational modeling; Gallium arsenide; Monte Carlo methods; Scattering; Solid modeling; Three-dimensional displays; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865836

Filename

6865836