• DocumentCode
    1769691
  • Title

    Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistors

  • Author

    Mahi, Abdelhamid ; Belghachi, A. ; Marinchio, Hugues ; Palermo, Carmine ; Varani, Luca

  • Author_Institution
    Lab. of Phys. & Semicond. Devices, Univ. of Bechar, Bechar, Algeria
  • fYear
    2014
  • fDate
    3-6 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    By means of a numerical hydrodynamic (HD) model coupled with Poisson pseudo-2D equation, we simulate the drain current response of a high electron mobility transistor (HEMT) to a THz signal applied to its gate and/or to its drain contacts in order to obtain the optimal configuration in terms of detection.
  • Keywords
    high electron mobility transistors; plasma oscillations; stochastic processes; terahertz waves; HD model; HEMT; Poisson pseudo2D equation; THz radiation; THz signal; drain contact; drain current response; high-electron mobility transistors; numerical hydrodynamic model; optimal configuration; plasma oscillation response; HEMTs; Harmonic analysis; Logic gates; Mathematical model; Plasma waves; Plasmas;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2014 International Workshop on
  • Conference_Location
    Paris
  • Type

    conf

  • DOI
    10.1109/IWCE.2014.6865859
  • Filename
    6865859
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1769691