Schottky barrier height reduction of NiGe/Ge junction by P ion implantation for metal source/drain Ge CMOS devices

Author

Oka, Hiroshi ; Minoura, Yuya ; Hosoi, Takuji ; Shimura, Takayoshi ; Watanabe, Heiji

Author_Institution

Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

We have demonstrated effective electron Schottky barrier height (eSBH) reduction of NiGe/Ge contacts using phosphorus ion implantation after germanidation. The eSBH was drastically reduced from 0.62 eV to 0.09 eV under optimum implantation and subsequent annealing conditions. Moreover, systematic studies of NiGe/Ge contacts with various P ion profiles indicated the variation in the eSBH at NiGe/Ge interface. This method allows us to design and control junction characteristics for future Ge-based devices.

Keywords

CMOS integrated circuits; Schottky barriers; annealing; elemental semiconductors; germanium; ion implantation; nickel compounds; phosphorus; NiGe-Ge; P; P ion implantation; annealing conditions; control junction characteristics; eSBH reduction; electron Schottky barrier height reduction; metal source-drain Ge CMOS devices; phosphorus ion implantation; Annealing; Ion implantation; Junctions; MOSFET circuits; Metals; Nonhomogeneous media; Resists; Schottky barrier height; germanium; ion implantation; junction characteristics; nickel germanide;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867050

Filename

6867050