Postgrowth annealing effects on structural, optical, and electrical properties of β-MoO3 films grown by molecular beam epitaxy

Author

Yagi, Shinji ; Matsuo, Masayuki ; Koike, Kazuto ; Harada, Yoshiyuki ; Sasa, Shigehiko ; Yano, Mitsuaki

Author_Institution

Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

We report the postgrowth annealing effects on the structural, optical, and electrical properties of a low-temperature grown β-phase MoO₃ film on a c-plane sapphire substrate by molecular beam epitaxy. By employing the postgrowth annealing at 600°C in an oxygen atmosphere, the film was completely transformed from β-phase to thermo-dynamically stable α-phase. On the other hand, oxygen deficient MoO_3-x domains were introduced into the film by the annealing at the same temperature in a nitrogen atmosphere. The latter film exhibited a high absorbance in a visible region accompanied by a decrease in resistivity.

Keywords

annealing; electrical resistivity; epitaxial layers; molecular beam epitaxial growth; molybdenum compounds; solid-state phase transformations; thermodynamic properties; visible spectra; β-phase transformation; Al₂O₃; MoO₃; annealing effect; c-plane sapphire substrate; electrical properties; electrical resistivity; light absorbance; low-temperature grown β-phase MoO₃ films; molecular beam epitaxy; nitrogen atmosphere; optical properties; oxygen atmosphere; oxygen deficient MoO_3-x domains; structural properties; thermo-dynamically stable α-phase transformation; visible region; Annealing; Atmosphere; Atmospheric measurements; Nitrogen; Optical diffraction; Optical films; MoO3; phase transition; postgrowth annealing effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867068

Filename

6867068