Resistive hysteresis of BaTiO3 ferroelectric thin film prepared by MOD method

Author

Hashimoto, Shuhei ; Fuchida, Shinpei ; Syu Ou ; Yamashita, Kaoru ; Noda, Minoru

Author_Institution

Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

An MOD-made BaTiO₃ (BT) thin film was prepared for investigating the relation between its ferroelectric properties and the behavior of resistive hysteresis. For the ferroelectric 110 nm-thickness BT film, its coercive field is observed to relate quantitatively to the characteristics of resistive hysteresis, where the current on/off ratio is obtained as 1-2 orders of magnitude. We consider that the ferroelectricity in the film makes a different type of behavior in resistive hysteresis and is effective for improving the behavior.

Keywords

barium compounds; chromium; dielectric hysteresis; ferroelectric capacitors; ferroelectric ceramics; ferroelectric coercive field; ferroelectric thin films; gold; platinum; silicon; silicon compounds; spin coating; Au-Cr-BaTiO₃-Pt-SiO₂-Si; MOD method; coercive field; current on-off ratio; ferroelectric properties; ferroelectric thin film; metal-organic-decomposition method; resistive hysteresis; size 110 nm; Annealing; Atmospheric measurements; Capacitors; Electric fields; Films; Hysteresis; Temperature; BaTiO3; MOD(Metal-Organic-Decomposition); current on/off ratio; ferroelectric; resistive hysteresis;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867072

Filename

6867072