DocumentCode
1770927
Title
Power electronics innovation by Silicon Carbide power semiconductor devices
Author
Okumura, Hajime
Author_Institution
Adv. Power Electron. Res. Center (ADPERC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2014
fDate
19-20 June 2014
Firstpage
1
Lastpage
2
Abstract
The importance of power electronics innovation in the future human society and related technology roadmap is presented. Based on the roadmap, recent progress in widegap semiconductor power electronics is reviewed, especially focused on Silicon Carbide (SiC) technology [1-3].
Keywords
power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; power electronics innovation; silicon carbide power semiconductor devices; widegap semiconductor power electronics; Inverters; Power systems; Silicon; Silicon carbide; Switches; Technological innovation; Electric Power Conversion; Inverter; Power Electronics; Power Semiconductor Device; SiC; Silicon Carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location
Kyoto
Print_ISBN
978-1-4799-3614-4
Type
conf
DOI
10.1109/IMFEDK.2014.6867086
Filename
6867086
Link To Document