Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer

Author

Kulchaisit, Chaiyanan ; Fujii, Mami ; Ueoka, Yoshihiro ; Bermundo, Juan Paolo ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

Author_Institution

Nara Inst. of Sci. & Technol., Ikoma, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO₂/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; V_gs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.

Keywords

amorphous semiconductors; gallium compounds; indium compounds; passivation; polymers; semiconductor device reliability; thin film transistors; ultraviolet lithography; zinc compounds; InGaZnO; SiO₂-Si; UV photolithography technique; amorphous indium gallium zinc oxide TFT reliability; bottom gate amorphous thin-film transistor reliability; channel layer; contact holes; photosensitive materials; photosensitive siloxane passivation layer; polymer passivation; positive bias stress; siloxane passivation layer; voltage 20 V; Logic gates; Materials; Passivation; Reliability; Stress; Thin film transistors; Threshold voltage; a-InGaZnO; passivation layer; photosensitive siloxane; thin-film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867088

Filename

6867088