Hydrogen behavior from ALD Al2O3 passivation layer for amorphous InGaZnO TFTs

Author

Tanaka, J. ; Ueoka, Yoshihiro ; Yoshitsugu, Koji ; Fujii, Masahiro ; Ishikawa, Yozo ; Uraoka, Y. ; Takechi, Kazushige ; Tanabe, Hiroshi

Author_Institution

NLT Technol., Ltd., Kawasaki, Japan

fYear

2014

fDate

2-4 July 2014

Firstpage

35

Lastpage

36

Abstract

The characteristics of amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) fabricated using atomic layer deposition (ALD) Al₂O₃ passivation layer and hydrogen distribution in a-InGaZnO were investigated by comparison with plasma enhanced chemical vapor deposition (PECVD) passivation layer. TFTs fabricated using PECVD passivation layer showed conductive or hump behavior, while that fabricated using ALD passivation layer showed enhancement type characteristics. According to secondary ion mass spectroscopy analysis, hydrogen was introduced into a-InGaZnO during PECVD, while it was hardly introduced during ALD regardless of considerable hydrogen in Al₂O₃. Thus, the behavior of hydrogen in a-InGaZnO is one possible cause of the difference in TFT characteristics between PECVD and ALD passivation.

Keywords

alumina; amorphous semiconductors; atomic layer deposition; gallium compounds; hydrogen; indium compounds; passivation; secondary ion mass spectra; semiconductor thin films; thin film transistors; zinc compounds; ALD passivation layer; Al₂O₃; H; InGaZnO; PECVD passivation layer; amorphous TFTs; amorphous indium gallium zinc oxide thin-film transistors; atomic layer deposition; conductive behavior; enhancement type characteristics; hump behavior; hydrogen behavior; hydrogen distribution; plasma enhanced chemical vapor deposition; secondary ion mass spectroscopy analysis; Aluminum oxide; Annealing; Hydrogen; Indium gallium zinc oxide; Passivation; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867115

Filename

6867115