Study on the transition between p and n types of SnOx film deposited by DC sputtering

Author

Meng, Stefan Weizhi ; Letao Zhang ; Xiang Xiao ; Shengdong Zhang

Author_Institution

Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China

fYear

2014

fDate

2-4 July 2014

Firstpage

105

Lastpage

107

Abstract

The influence of deposition conditions on the electrical characteristics of SnO_x thin films deposited by direct current (DC) sputtering is presented in this paper. The influence of deposition process on the transition conditions between p-type and n-type SnO_x thin films is systematically investigated for the first time. The results show that with the increase of oxygen partial pressure, depositing temperature and DC power, the conduction type of SnO_x thin film switches from p-type to n-type. An n-type SnO_x TFT is then successfully fabricated based on obtained conditions of the n-type SnO_x thin film.

Keywords

electrical conductivity; hafnium; hafnium compounds; metal-semiconductor-metal structures; nickel; semiconductor growth; semiconductor materials; semiconductor thin films; silicon compounds; sputter deposition; thin film transistors; tin compounds; Ni-SnO_x-HfO₂-Hf-SiO₂; SiO₂; TFT; dc sputtering deposition; direct current sputtering; electrical properties; n-type conduction; p-type conduction; thin films; Annealing; Fabrication; Films; Sputtering; Temperature; Temperature measurement; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867138

Filename

6867138