Novel functional devices of transition metal dichalcogenide monolayers

Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS₂, MoSe₂ and WSe₂, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS₂ thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.