DocumentCode
1771817
Title
Improvement of photodiode responsivity using the InAs quantum dot family for monolithic integration
Author
Umezawa, Toshimasa ; Akahane, Kouichi ; Kanno, Atsushi ; Kawanishi, Tetsuyas
Author_Institution
Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
We report a photodiode (PD) hybrid sub-system using a 1.5°m quantum dot (QD) semiconductor optical amplifier (SOA) and a QD-PD for a high-speed and high-sensitivity photoreceiver, and we characterize its responsivity.
Keywords
III-V semiconductors; indium compounds; integrated optics; optical receivers; photodiodes; quantum dot lasers; semiconductor optical amplifiers; InAs; high-sensitivity photoreceiver; high-speed photoreceiver; monolithic integration; photodiode hybrid sub-system; photodiode responsivity; quantum dot; semiconductor optical amplifier; wavelength 1.5 mum; Optical fibers; Optical films; Optical filters; Optical reflection; Optical surface waves; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6989622
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