• DocumentCode
    1771827
  • Title

    Tensile-strained, heavily n-doped germanium-on-insulator for light emitting devices on silicon

  • Author

    Xuejun Xu ; Nishida, Keisuke ; Sawano, Kentarou ; Maruizumi, Takuya ; Shiraki, Yasuhiro

  • Author_Institution
    Res. Center for Silicon Nano-Sci., Tokyo City Univ., Tokyo, Japan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Strong direct gap light emission is obtained from germanium-on-insulator (GOI) with tensile strain of 0.16% and ultra-high n-type doping concentration up to 1.0×1020 cm-3. Microdisk resonators are also fabricated on GOI and show modulated emission spectra.
  • Keywords
    doping profiles; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; light emitting diodes; micro-optics; microcavities; optical fabrication; optical materials; optical resonators; semiconductor doping; semiconductor-insulator boundaries; silicon; GOI; Ge; Si; direct gap light emission; light emitting devices; microdisk resonators; modulated emission spectra; silicon; tensile-strained heavily n-doped germanium-on-insulator; ultra-high n-type doping concentration; Doping; Lasers; Optical resonators; Silicon; Substrates; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771827