DocumentCode
1771858
Title
Buried-heterostructure L3 nanocavity all-optical memory with 2.3-nW power consumption
Author
Kuramochi, E. ; Nozaki, Kengo ; Shinya, Akihiko ; Taniyama, H. ; Takeda, Kenji ; Sato, Takao ; Matsuo, Shoichiro ; Notomi, M.
Author_Institution
NTT Nanophotonics Center, NTT Corp., Atsugi, Japan
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
A tuned L3 design with an enhanced Q factor and a small mode volume enabled 2.3-nW bias power for a buried-heterostructure InGaAsP/InP nanocavity optical memory that was 1/10 of the previous record (30 nW).
Keywords
III-V semiconductors; Q-factor; gallium arsenide; indium compounds; nanophotonics; optical storage; power consumption; semiconductor heterojunctions; InGaAsP-InP; buried-heterostructure L3 nanocavity all-optical memory; enhanced Q factor; power 2.3 nW; power consumption; small mode volume; tuned L3 design; Memory management; Optical bistability; Optical network units; Optical pulses; Optical resonators; Photonic crystals;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6989642
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