• DocumentCode
    1771932
  • Title

    Error-free 25-Gbit/s direct modulation of lateral-current-injection DFB laser

  • Author

    Hasebe, Koichi ; Sato, Takao ; Takeda, Kenji ; Fujii, Teruya ; Kakitsuka, Takaaki ; Matsuo, Shoichiro

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present a lateral-current-injection InP-based DFB laser consisting of a pn junction fabricated by using Zn thermal diffusion and Si ion implantation. An error-free direct modulation with a bit rate of 25 Gbit/s is achieved.
  • Keywords
    III-V semiconductors; distributed feedback lasers; elemental semiconductors; indium compounds; ion implantation; optical fabrication; optical modulation; semiconductor lasers; silicon; thermal diffusion; wide band gap semiconductors; zinc; InP:Zn,Si; bit rate 25 Gbit/s; distributed feedback laser; error-free 25-Gbit/s direct modulation; ion implantation; lateral-current-injection DFB laser; pn junction; thermal diffusion; Fabrication; Gratings; Indium phosphide; Laser modes; Modulation; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989683