• DocumentCode
    1771942
  • Title

    1.3 µm InAs/GaAs quantum dot lasers on SOI waveguide structures

  • Author

    Tanabe, Kazuki ; Arakawa, Yasuhiko

  • Author_Institution
    Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A 1.3-μm InAs/GaAs quantum dot laser on a silicon-on-insulator waveguide structure with a threshold current density of 300 A/cm2 and lasing temperatures greater than 100°C is fabricated by direct wafer bonding and layer transfer.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; integrated optics; laser beams; optical fabrication; optical waveguides; quantum dot lasers; silicon-on-insulator; wafer bonding; InAs-GaAs; InAs/GaAs quantum dot lasers; SOI waveguide structures; direct wafer bonding; lasing temperatures; layer transfer; silicon-on-insulator waveguide structure; threshold current density; wavelength 1.3 mum; Gallium arsenide; Optical waveguides; Quantum dot lasers; Silicon; Temperature; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771942