Power electronics equipments applying novel SiC power semiconductor modules

New SiC (Silicon Carbide) power semiconductor modules were developed and applied to the power electronics equipments. 25% of loss in the motor drive inverter is reduced by applying hybrid modules which are composed of conventional Silicon IGBTs (Si-IGBT) and SiC Schottky Barrier Diodes (SiC-SBD). In case of a 20kW inverter for solar photovoltaic (PV) generation, 99% of main circuit efficiency and reduction of size to 25% are realized by applying all-SiC modules using SiC-MOSFETs and SiC-SBDs. Furthermore, we developed a boost chopper using the all-SiC modules for high power PV inverter (Mega solar) application. By applying the boost choppers, the input voltage fluctuation is reduced and 25% of power density is increased.