Packaging for SiC power device

Author

Funaki, Tsuyoshi

Author_Institution

Grad. Sch. of Eng., Osaka Univ., Suita, Japan

fYear

2014

fDate

18-21 May 2014

Firstpage

1933

Lastpage

1937

Abstract

The wide band gap nature of SiC semiconductor makes high voltage power device possible to operate at high temperature. The high temperature operation of power device is expected to realize simplification of cooling system and miniaturizing the system size with smaller heat sink and/or less liquid cooling system. However, conventional plastic packaging for Si power device is designed to operate lower than 150 °C, which cannot be used for high temperature operation of SiC power device. Then, this paper develops the ceramic packaging for SiC power device to operate at extremely high temperature. The reliability of the developed ceramic package for long term high temperature exposure test and repetitive heat shock test results are introduced in the paper.

Keywords

ceramic packaging; cooling; heat sinks; plastic packaging; power semiconductor devices; semiconductor device models; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; silicon compounds; wide band gap semiconductors; SiC; ceramic packaging; heat sink; liquid cooling system; long term high temperature exposure testing; plastic packaging; power semiconductor device packaging; reliability; repetitive heat shock testing; Breakdown voltage; Educational institutions; Electric breakdown; Neck; Reliability; Silicon carbide; Wires; SiC power device; ceramic package; high temperature operation; reliablity test;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International

Conference_Location

Hiroshima

Type

conf

DOI

10.1109/IPEC.2014.6869849

Filename

6869849