Switching simulation of SiC high-power module with low parasitic inductance

In this paper, we present a simulation technique for a high-power module using silicon carbide (SiC) phase leg units. Each phase leg unit has parasitic inductances that are caused by bonding wires and patterns on a substrate in the phase leg unit. The parasitic inductances are extracted using a quasi-electromagnetic simulation tool. We also estimate mutual inductances between the parasitic inductances in the high-power module. We fabricate a high-power module that consists of six phase leg units with low parasitic inductance. Simulation results show a spike voltage of 156 V and a total parasitic inductance of 7.1 nH. Measurement results indicate a spike voltage of 154 V and a total parasitic inductance of 8.1 nH. These results show that the proposed technique is appropriate for predicting the switching performances of the high-power modules.