• DocumentCode
    1775092
  • Title

    Evaluation of partial discharge inception voltage of bonding-less gas insulation packaging for high temperature and high voltage power module

  • Author

    Koyanagi, K. ; Yamane, Akinari ; Imakiire, Akihiro ; Kozako, Masahiro ; Hikita, Masayuki ; Dinculescu, Sorin ; Valdez-Nava, Zarel ; Lebey, T.

  • Author_Institution
    Electr. & Electron. Eng., Kyushu Inst. of Technol., Kitakyushu, Japan
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    425
  • Lastpage
    428
  • Abstract
    The purpose of our work is to develop a power module using gas insulation and bonding-less interconnections to avoid the reliability issues known to current packaging technology. This paper deals with the temperature dependence of partial discharge inception voltage (PDIV) of a developed module up to 300 °C. In addition, an attempt is achieved to confirm half-wave rectifying operation up to 300 °C using SiCSchottky barrier diodes (SiC-SBD). From these results, the PDs were not detected up to 1500 V and 300 °C, proving its ability to be used in high temperature applications.
  • Keywords
    III-V semiconductors; Schottky barriers; Schottky diodes; electronics packaging; elemental semiconductors; gaseous insulation; partial discharges; power semiconductor diodes; PDIV; bonding-less gas insulation packaging; bonding-less interconnections; halfwave rectifying operation; high temperature power module; high voltage power module; partial discharge inception voltage evaluation; silicon carbide-Schottky barrier diodes; temperature 300 degC; temperature dependence; voltage 1500 V; Current measurement; Heating; Leakage currents; Nitrogen; Reliability; Temperature measurement; Bonding-less structure; Gas insulation; Partial discharge; Power module; SiC semiconducter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials (ISEIM), Proceedings of 2014 International Symposium on
  • Conference_Location
    Niigata
  • Type

    conf

  • DOI
    10.1109/ISEIM.2014.6870809
  • Filename
    6870809