A millimeter wave 11W GaN MMIC power amplifier

Author

Xuming Yu ; Wei Hong ; Weibo Wang ; Hongqi Tao ; Chunjiang Ren

Author_Institution

State Key Lab. of Millimeter Wave, Southeast Univ., Nanjing, China

fYear

2014

fDate

26-29 July 2014

Firstpage

1342

Lastpage

1344

Abstract

A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5 dBm and peak power-added-efficiency of 20% were measured at 29 GHz with the pulsed DC supply voltage of 24 V. Across the 28-31 GHz range, the amplifier delivers output power above 39.3 dBm with power added efficiency over 15%.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; field effect MMIC; gallium compounds; microwave power amplifiers; millimetre wave power amplifiers; wide band gap semiconductors; AlGaN-GaN; HEMT; MMIC power amplifier; SiC; T-gate field plated high electron mobility transistors; frequency 28 GHz to 31 GHz; microstrip transmission line technology; millimeter wave application; millimeter wave power amplifier; monolithic three-stage amplifier; power 11 W; size 0.15 mum; size 3 in; voltage 24 V; Gallium nitride; HEMTs; MMICs; MODFETs; Microwave amplifiers; Millimeter wave technology; Power amplifiers; GaN HEMTs; MMIC; Millimeter; high power; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (APCAP), 2014 3rd Asia-Pacific Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-4355-5

Type

conf

DOI

10.1109/APCAP.2014.6992771

Filename

6992771