DocumentCode
1777008
Title
Modelling the influence of self-heating on characteristics of IGBTs
Author
Gorecki, Krzysztof ; Gorecki, Pawel
Author_Institution
Dept. of Marine Electron., Gdynia Maritime Univ., Gdynia, Poland
fYear
2014
fDate
19-21 June 2014
Firstpage
298
Lastpage
302
Abstract
The paper refers to modelling characteristics of IGBT in SPICE software with self-heating taken into account. The form of the electrothermal model of the considered transistor and equations describing this model are proposed. The correctness of the proposed model is verified experimentally during the operation of the examined transistor at different cooling conditions. Particular attention is paid to the non-typical course of characteristics of the considered device at weak excitation and the shape of the obtained characteristics is discussed.
Keywords
SPICE; insulated gate bipolar transistors; semiconductor device models; IGBT characteristics; SPICE software; cooling conditions; electrothermal model; self-heating modelling; weak excitation; Insulated gate bipolar transistors; Integrated circuit modeling; Temperature; Temperature measurement; Threshold voltage; Transistors; Voltage measurement; IGBT; SPICE; electrothermal model; self-heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location
Lublin
Print_ISBN
978-83-63578-03-9
Type
conf
DOI
10.1109/MIXDES.2014.6872205
Filename
6872205
Link To Document