The influence of the selected factors on transient thermal impedance of semiconductor devices

Author

Gorecki, Krzysztof ; Zarebski, Janusz

Author_Institution

Dept. of Marine Electron., Gdynia Maritime Univ., Gdynia, Poland

fYear

2014

fDate

19-21 June 2014

Firstpage

309

Lastpage

314

Abstract

In the paper the method of estimating values of parameters of the compact thermal model of semiconductor devices is described. The input data for this method are the measured waveforms of transient thermal impedance of the investigated device. The output data of the method are: the set of parameters describing the waveform of transient thermal impedance. The usefulness of the presented method is shown for the selected power MOS transistors operating at different cooling conditions.

Keywords

parameter estimation; power MOSFET; semiconductor device models; thermal analysis; transient analysis; compact thermal model; cooling conditions; input data; output data; parameter estimation values; power MOS transistors; semiconductor devices; transient thermal impedance; Heating; Impedance; Semiconductor device modeling; Thermal resistance; Transient analysis; Transistors; compact thermal model; estimation method; semiconductor devices; thermal parameters; transient thermal impedance;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference

Conference_Location

Lublin

Print_ISBN

978-83-63578-03-9

Type

conf

DOI

10.1109/MIXDES.2014.6872207

Filename

6872207