DocumentCode
1777029
Title
Small signal performance of VES-BJT
Author
Mierzwinski, Piotr
Author_Institution
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
fYear
2014
fDate
19-21 June 2014
Firstpage
342
Lastpage
346
Abstract
VES-BJT is a novel bipolar device in VESTIC technology proposed by W. Maly. This paper extends previously published considerations about expected features of such a device. It contains important information about using earlier introduced definitions in context of calculating small signal parameters of VES-BJT i.e. an unit gain frequency and an unit power gain frequency. Theoretical considerations are illustrated with simulation results. Presented data and methodology are the basis for future development of complete compact model of VES-BJT. Simulation and analytical results confirm the big potential of bipolar devices in VESTIC technology.
Keywords
bipolar transistors; VES-BJT; VESTIC technology; bipolar device; small signal performance; unit gain frequency; unit power gain frequency; Analytical models; Capacitance; Integrated circuit modeling; Silicon; Simulation; Tin; Transistors; VESTIC; bipolar transistor; compact model; small signal;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference
Conference_Location
Lublin
Print_ISBN
978-83-63578-03-9
Type
conf
DOI
10.1109/MIXDES.2014.6872214
Filename
6872214
Link To Document