Fabrication and characterization of junctionless MOSFETs for sensor applications

Author

Zaborowski, Michal ; Tomaszewski, Daniel ; Malesinska, Jolanta ; Grabiec, Piotr

Author_Institution

Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland

fYear

2014

fDate

19-21 June 2014

Firstpage

367

Lastpage

371

Abstract

A method for fabrication of junctionless SOI MOS devices for sensor applications is presented in the paper. Two groups of devices, namely FinFET-type devices, and wide MOSFETs have been designed and manufactured in a single process sequence on the same wafer. Electrical measurements of the MOSFETs as well characterization work have been carried out. The characterization work is based on a proposed model of junctionless MOSFETs and is focused on analysis of the symmetry between the resistive lines connecting the transistor active area with the pads.

Keywords

MOSFET; elemental semiconductors; semiconductor device models; silicon-on-insulator; FinFET-type device; electrical measurement; junctionless MOSFET characterization; junctionless MOSFET fabrication; junctionless MOSFET model; junctionless SOI MOS device fabrication; resistive lines; sensor application; single-process sequence; transistor active area; Correlation; FinFETs; Logic gates; Silicon; Substrates; FinFET; PaDEOx; SOI; electrical measurements; junctionless MOSFET; parameter extraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits & Systems (MIXDES), 2014 Proceedings of the 21st International Conference

Conference_Location

Lublin

Print_ISBN

978-83-63578-03-9

Type

conf

DOI

10.1109/MIXDES.2014.6872220

Filename

6872220