DocumentCode
1777245
Title
Memristive synaptic plasticity in Pr0.7 Ca0.3 MnO3 RRAM by bio-mimetic programming
Author
Panwar, Nisha ; Kumar, Dinesh ; Upadhyay, N.K. ; Arya, P. ; Ganguly, Utsav ; Rajendran, Bipin
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, Mumbai, India
fYear
2014
fDate
22-25 June 2014
Firstpage
135
Lastpage
136
Abstract
In this paper, the authors have demonstrated various forms of timing dependent plasticity in PCMO based RRAM devices using very simple programming pulses leveraging its memristive characteristics. Thanks to the intrinsic rectifying nature of their devices in the ON state, they have also shown that our synapse circuit does not require a current-limiting bipolar diode to prevent parasitic programming. These devices thus can be integrated in cross-bar arrays to build neuromorphic systems capable of performing a wide variety of supervised and unsupervised learning tasks.
Keywords
biomimetics; calcium compounds; learning (artificial intelligence); manganese compounds; memristors; neural nets; neurophysiology; positronium; random-access storage; ON state; PCMO-based RRAM device; Pr0.7Ca0.3MnO3; bio-mimetic programming; cross-bar arrays; current-limiting bipolar diode; memristive characteristics; memristive synaptic plasticity; neuromorphic systems; parasitic programming; programming pulse; supervised learning task; synapse circuit; timing-dependent plasticity; unsupervised learning task; Immune system; MIMICs; Neurons; Programming; Silicon; Switches; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location
Santa Barbara, CA
Print_ISBN
978-1-4799-5405-6
Type
conf
DOI
10.1109/DRC.2014.6872334
Filename
6872334
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