Observation of impact ionization at sub-0.5V and resultant improvement in ideality in I-NPN selector device by Si epitaxy for RRAM applications

Author

Das, Biswajit ; Meshram, R. ; Ostwal, V. ; Schulze, J. ; Ganguly, Utsav

Author_Institution

Indian Inst. of Technol., Bombay, Mumbai, India

fYear

2014

fDate

22-25 June 2014

Firstpage

139

Lastpage

140

Abstract

The improvement in ideality is demonstrated by impact ionization at sub-0.5V in silicon despite the higher 1eV band-gap. The NIPIN structure produces high internal field due to the built-in potential (~1eV) of the junctions in addition to Va (cf. a simple pn junction in IMOS) which provides electron sufficient (>bandgap) energy for II. In addition, the dopant profile engineering with i-region to increase scattering length is possibly responsible to effective Impact Ionization at low bias enabling record low bias II (Table 1 that is attractive for advanced memory and logic.

Keywords

elemental semiconductors; ionisation; random-access storage; semiconductor epitaxial layers; silicon; I-NPN selector device; NIPIN structure; RRAM; Si; advanced memory; band-gap; dopant profile engineering; high internal field; impact ionization observation; low bias; scattering length; silicon epitaxy; Doping profiles; Epitaxial growth; Impact ionization; Silicon; Steady-state; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872336

Filename

6872336