Proposal of a topological insulator based magnetoelectric transistor

Author

Xiaopeng Duan ; Xiaodong Li ; Semenov, Yuriy G. ; Ki Wook Kim

Author_Institution

Dept. of Electr. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

2014

fDate

22-25 June 2014

Firstpage

149

Lastpage

150

Abstract

A new type of transistor is proposed based on wave-guiding phenomena of topological insulator (TI) surface electrons for applications in CMOS-like circuits and switchable interactions in spin logic circuits. The carrier channel is patterned by the magnetic strip and the ON/OFF switch is achieved by the electrically controlled magnetic valve (Fig. 1A). We characterized the current-gate voltage (I_d-V_g) relation and the time resolved performance. Very low subthreshold swing (below 10 mV/dec) and operating frequency above 1 GHz are expected.

Keywords

CMOS integrated circuits; logic circuits; magnetic logic; magnetoelectronics; transistor circuits; CMOS-like circuits; ON-OFF switch; TI surface electrons; carrier channel; current-gate voltage relation; electrically controlled magnetic valve; magnetic strip; spin logic circuits; subthreshold swing; switchable interactions; topological insulator based magnetoelectric transistor; waveguiding phenomena; Magnetic confinement; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2014 72nd Annual

Conference_Location

Santa Barbara, CA

Print_ISBN

978-1-4799-5405-6

Type

conf

DOI

10.1109/DRC.2014.6872341

Filename

6872341