Comparative study of a fully differential op amp in FinFET and planar technologies

Author

Morrison, Sebastien ; Parvais, Bertrand ; Vandersteen, Gerd ; Miyaguchi, Kenichi ; Mercha, Abdelkarim ; Wambacq, Piet

Author_Institution

imec, Leuven, Belgium

fYear

2014

fDate

June 30 2014-July 3 2014

Firstpage

1

Lastpage

4

Abstract

In the race to deliver ever smaller and faster devices, bulk FinFETs are seen as a viable alternative to planar bulk technologies. With that in mind, a new benchmarking scheme is implemented in order to effectively and fairly compare, in simulation, a 10nm FinFET technology with a 28nm planar CMOS one on a 100 MHz gain-bandwidth operational amplifier. For identical phase margins, the 10nm design consumes 99 μA compared to over 123 μA in 28nm, yielding a substantial decrease in power consumption in favor of the FinFET-based design.

Keywords

CMOS analogue integrated circuits; MOSFET; differential amplifiers; operational amplifiers; FinFET technology; bandwidth 100 MHz; benchmarking scheme; current 99 muA; fully differential op amp; gain-bandwidth operational amplifier; identical phase margins; planar CMOS technology; planar bulk technology; power consumption; size 10 nm; size 28 nm; Capacitance; FinFETs; Gain; Logic gates; Operational amplifiers; 10nm FinFET; 28nm planar; CMOS; Op amp; benchmarking; stacked transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on

Conference_Location

Grenoble

Type

conf

DOI

10.1109/PRIME.2014.6872667

Filename

6872667