Methodology modeling of MaE-fabricated Porous Silicon Nanowires

Porous Silicon Nanowires (PS-NWs) represent very promising electronic devices with a wide range of applications, all taking advantage of the irregular microscopic structure of PS. The strong variability of the electrical properties of the material with technological process makes computer simulation of PS-nanowires a cumbersome task. Here we present a simple model of PS-NWs which can be implemented for simulations in physics-based software TCAD Atlas thus giving a contribution to the investigation of the effects of the peculiar structure on the material resistivity. Extensive simulations have been performed on PS-Nws with microscopic characteristics deduced from our experimental fabricated devices. We investigated the dependence of current from applied voltage and channel doping also in relation with the electrical field inside the device and with the carriers´ mobility. Finally we suggest an electrical model for PS-NWs easily implemented in commercial circuit simulators (Eldo in this case). It will allow to exploit the actual simulation tools also for the analysis and design of circuits where PS-based devices are present.