Analysis and design of a high power, high gain SiGe BiCMOS output stage for use in a millimeter-wave power amplifier

Author

Pierco, Ramses ; De Keulenaer, Timothy ; Torfs, Guy ; Bauwelinck, Johan

Author_Institution

INTEC/IMEC, Ghent Univ., Ghent, Belgium

fYear

2014

fDate

June 30 2014-July 3 2014

Firstpage

1

Lastpage

4

Abstract

In this paper a high gain, high power output stage designed in a 250nm SiGe BiCMOS technology is presented. The used topology together with a discussion on the stability of the output stage is explained in detail. In order to increase the gain of the output stage and thus increases the attainable power added efficiency (PAE), positive feedback is used. Furthermore a formula predicting the input impedance of a common base transistor at high frequencies is deducted which explains and predicts the magnitude of the feedback mechanism. The output stage achieves a peak gain of 14.4dB at 31GHz with a maximum output power of 22dBm.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar MIMIC; circuit feedback; circuit stability; integrated circuit design; millimetre wave power amplifiers; semiconductor materials; PAE; SiGe; common base transistor; frequency 31 GHz; high power high gain BiCMOS output stage; input impedance; millimeter-wave power amplifier; output stage stability; positive feedback mechanism; power added efficiency; size 250 nm; Capacitance; Capacitors; Equations; Impedance; Resonant frequency; Topology; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on

Conference_Location

Grenoble

Type

conf

DOI

10.1109/PRIME.2014.6872749

Filename

6872749