Properties of aluminum oxynitride films prepared by reactive magnetron sputtering

Author

Borisova, A. ; Machulyansky, B. Babych A. ; Rodionov, M. ; Yakimenko, Y.

Author_Institution

NTUU “Kiev Polytech. Inst.”, Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

188

Lastpage

190

Abstract

Influence of technological modes of synthesis of aluminum oxynitride films by a method of magnetron reactive sputtering on their physical and chemical parameters is probed. Studied by IR spectroscopy and Auger electron microscopy and elemental, phase and structural composition of the synthesized films. Features of spectral and electro-physical parameters of films are discussed. Chemical stability of films is probed. Recommendations about modes of synthesis of films of electro-physical parameters of films providing optimization on the given their operational properties are received.

Keywords

Auger electron spectra; aluminium compounds; electron microscopy; infrared spectra; sputter deposition; thermal stability; thin films; Al₃O₃N; Auger electron microscopy; IR spectroscopy; aluminum oxynitride films; chemical parameters; chemical stability; electro-physical parameters; elemental composition; operational properties; phase composition; physical parameters; reactive magnetron sputtering; spectral parameters; structural composition; Aluminum; III-V semiconductor materials; Magnetic films; Sputtering; Substrates; Thermal stability; aluminum oxynitride film; chemical resistance; dielectric strength; magnetron reactive sputtering; thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873942

Filename

6873942