Admittance spectroscopy using for the determination of parameters of Si nanoclusters embedded in SiO2

Author

Ilchenko, V.V. ; Marin, V.V. ; Vasyliev, I.S. ; Tretyak, O.V. ; Bratus, O.L. ; Evtukh, A.A.

Author_Institution

Inst. of High Technol., Taras Shevchenko Kyiv Nat. Univ., Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

86

Lastpage

89

Abstract

It has been experimentally found that structures with Si-nanoclusters grown by ion-plasma sputtering method revealed the effect of dynamical memorizing. The negative constituent of differential capacitance for these structures has been clearly obtained. Electric properties of structures with Si-nanoclusters and parameters of interface states located between Si-nanoclusters and SiO₂ were studied in detail by measuring of frequency and temperature dependences of C-V characteristics.

Keywords

capacitance; elemental semiconductors; interface states; ion beam assisted deposition; nanocomposites; nanofabrication; plasma deposition; semiconductor-insulator boundaries; silicon; silicon compounds; sputter deposition; thin films; C-V characteristics; Si-SiO₂; admittance spectroscopy; differential capacitance; dynamical memorizing effect; electric properties; embedded Si nanoclusters; frequency dependences; interface states; ion-plasma sputtering method; negative constituent; parameter determination; temperature dependences; Capacitance-voltage characteristics; Films; Quantum capacitance; Silicon; Temperature dependence; Temperature measurement; admittance spectroscopy; capacitance-voltage characteristic; negative differential capacitance; silicon nanoclusters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873969

Filename

6873969