DocumentCode
1779196
Title
Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications
Author
Allred, P.S. ; Myronov, M. ; Rhead, S.D. ; Warburton, R. ; Intermite, G. ; Buller, G. ; Leadley, D.R.
Author_Institution
Dept. of Phys., Univ. of Warwick, Coventry, UK
fYear
2014
fDate
2-4 June 2014
Firstpage
67
Lastpage
68
Abstract
SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.
Keywords
avalanche photodiodes; chemical vapour deposition; elemental semiconductors; germanium; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; Ge-Si; RP-CVD; crystallinity; device incorporation; doping profiles; epitaxial growth; optimization; single photon avalanche diode applications; smooth surface; thick Ge-on-Si structures; threading dislocation density; Decision support systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874639
Filename
6874639
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