DocumentCode
1779203
Title
Effect of thermal nitridation on phosphorus diffusion in SiGe and SiGe:C and its implication on diffusion mechanisms
Author
Yiheng Lin ; Yasuda, Hozumi ; Ho, Henry ; Schiekofer, Manfred ; Benna, Bernhard ; Wise, R. ; Guangrui Xia
Author_Institution
Dept. of Mater. Eng., Univ. of British Columbia, Vancouver, BC, Canada
fYear
2014
fDate
2-4 June 2014
Firstpage
95
Lastpage
96
Abstract
The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.
Keywords
Ge-Si alloys; annealing; carbon; diffusion; interstitials; nitridation; phosphorus; secondary ion mass spectra; semiconductor materials; vacancies (crystal); SiGe:C,P; SiGe:P; diffusion profiles; inert annealing; interstitial injection; masking layers; phosphorus diffusion; secondary ion mass spectroscopy; thermal nitridation; vacancy injection; Decision support systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874641
Filename
6874641
Link To Document