• DocumentCode
    1779250
  • Title

    Thermal stability of highly compressive strained germanium-tin (GeSn) grown by molecular beam epitaxy

  • Author

    Wei Wang ; Qian Zhou ; Jisheng Pan ; Zheng Zhang ; Eng Soon Tok ; Yee-Chia Yeo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    Highly strained Ge1-xSnx films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge0.932Sn0.068.
  • Keywords
    X-ray photoelectron spectra; germanium alloys; metallic epitaxial layers; molecular beam epitaxial growth; surface segregation; thermal stability; tin alloys; Ge; Ge1-xSnx; XPS; critical temperature; crystalline quality; highly compressive strained germanium-tin films; molecular beam epitaxy; surface segregation; temperature 400 degC; thermal stability; Annealing; Molecular beam epitaxial growth; Rough surfaces; Surface roughness; Three-dimensional displays; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874668
  • Filename
    6874668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779250