• DocumentCode
    1779254
  • Title

    Growth of tensile-strained Ge layer and highly strain-relaxed Ge1−xSnx buffer layer on silicon by molecular beam epitaxy

  • Author

    Wei Wang ; Eng Soon Tok ; Yee-Chia Yeo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    Highly strain-relaxed Ge1-xSnx layers were grown directly on Si(100) by MBE firstly. XRD and AFM measurements demonstrate a good crystalline quality and a relatively flat surface. Ge with 0.82% tensile strain were grown on the Ge0.895Sn0.105/Si, and the tensile-strain value decreases with increasing thickness of Ge epilayers.
  • Keywords
    X-ray diffraction; atomic force microscopy; buffer layers; elemental semiconductors; germanium; germanium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; tensile strength; AFM; Ge-Ge1-xSnx-Si; Si; Si(100) substrate; XRD; crystalline quality; epilayer thickness; highly strain-relaxed buffer layer; molecular beam epitaxy; tensile-strained layer; Buffer layers; Lattices; Silicon; Tensile strain; Tin; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874669
  • Filename
    6874669
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779254