Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and ar environment

Introduction of Ge into ULSIs has become increasingly attractive for the fabrication of high-performance ultrasmall devices because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in clean room air, the control of formation and reduction of Ge oxide is largely important. In this work, the formation of Ge oxide on Ge in cleanroom air and the reduction of Ge oxide by Si on Si substrate and by SiH₄ have been investigated.