• DocumentCode
    1779283
  • Title

    Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate

  • Author

    Higashi, Hiroshi ; Fujita, Yoshikazu ; Kawano, Makoto ; Hirayama, Junya ; Yamada, Shigeru ; Jong-Hyeok Park ; Sadoh, T. ; Miyao, Masanobu ; Hamaya, Kohei

  • Author_Institution
    Dept. of Electron., Kyushu Univ., Fukuoka, Japan
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe3Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.
  • Keywords
    chemical mechanical polishing; elemental semiconductors; germanium; iron alloys; magnetic epitaxial layers; metallic thin films; molecular beam epitaxial growth; silicon alloys; tin; 111)-oriented Ge; CMP; Fe3Si; Ge:Sn; Heusler-compounds; Sn-doped Ge insertion layers; epitaxial growth; ferromagnetic films; flexible substrate; flexible system-in-display devices; Compounds; Epitaxial growth; Magnetoelectronics; Polyimides; Substrates; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874683
  • Filename
    6874683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779283