• DocumentCode
    1779289
  • Title

    Epitaxial growth and crystalline properties of Ge1−x−ySixSny layers on Ge(001) substrates

  • Author

    Asano, Takashi ; Terashima, Tomohide ; Yamaha, Takashi ; Kurosawa, Masashi ; Takeuchi, Wataru ; Taoka, Noriyuki ; Nakatsuka, Osamu ; Zaima, Shigeaki

  • Author_Institution
    Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    159
  • Lastpage
    160
  • Abstract
    We investigated the crystalline structure of Ge1-x-ySixSny layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge1-x-ySixSny layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge1-x-ySixSny layer even with small misfit strain.
  • Keywords
    germanium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon compounds; ternary semiconductors; Ge; Ge(001) substrates; Ge1-x-ySixSny; compressive strained layers; crystalline properties; crystalline structure; epitaxial growth; misfit strain; strain direction; unstrained layers; Lattices; Rough surfaces; Strain; Substrates; Surface morphology; Surface roughness; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874688
  • Filename
    6874688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779289