DocumentCode
1779316
Title
Epitaxy of light emitting SiGeSn materials using novel precursors
Author
Kouvetakis, J. ; Menendez, J.
Author_Institution
Dept. of Chem. & Biochem., Arizona State Univ., Tempe, AZ, USA
fYear
2014
fDate
2-4 June 2014
Firstpage
143
Lastpage
144
Abstract
Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. In this presentation we review synthesis, optical properties and preliminary device studies of crystalline Ge1-ySny and Ge1-X-ySiiSny alloys developed at ASU.
Keywords
Ge-Si alloys; chemical vapour deposition; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; tin alloys; SiGeSn; crystalline alloys; epitaxy; light emitting materials; optical properties; preliminary device studies; synthesis; Nonlinear optics; Physics; Silicon; Solids; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874700
Filename
6874700
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