DocumentCode
1779329
Title
Strained Ge microbridges to obtain a direct bandgap laser
Author
Geiger, Richard ; Suess, M.J. ; Bonzon, C. ; Spolenak, R. ; Faist, J. ; Sigg, Hans
Author_Institution
Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
fYear
2014
fDate
2-4 June 2014
Firstpage
7
Lastpage
8
Abstract
Recent demonstrations of light emission from group IV materials such as Ge and its alloy with Sn renew the vision for the realization of an all group IV based opto-electronic platform. We compare some of these approaches to our strain method and mention rewarding research to further improve materials and concepts.
Keywords
elemental semiconductors; germanium; internal stresses; micro-optics; Ge; direct bandgap laser; group IV materials; light emission; opto-electronic platform; strain method; strained microbridges; Doping; Optical device fabrication; Photonic band gap; Photonics; Silicon; Strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874706
Filename
6874706
Link To Document