• DocumentCode
    1779369
  • Title

    Enhanced responsivity by integration of interdigitated electrodes on Ge0.93Sn0.07 infrared photodetectors

  • Author

    Pham, Thach ; Conley, Benjamin R. ; Liang Huang ; Wei Du ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Nazzal, Amjad ; Soref, Richard A. ; Sun, Greg ; Margetis, Joe ; Tolle, John ; Naseem, Hameed A. ; Shui-Qing Yu

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
  • fYear
    2014
  • fDate
    12-16 Oct. 2014
  • Firstpage
    358
  • Lastpage
    359
  • Abstract
    The interdigitated electrodes were integrated on Ge0.93Sn0.07/Ge heterostructure photoconductive detectors. Photoresponse extending to 2.2 μm was achieved, and the enhanced responsivity with reduced spacing between interdigitated electrodes was observed at room temperature.
  • Keywords
    electrodes; elemental semiconductors; germanium; germanium alloys; infrared detectors; photodetectors; tin alloys; Ge0.93Sn0.07-Ge; enhanced responsivity; heterostructure photoconductive detectors; infrared photodetectors; interdigitated electrodes; photoresponse; reduced spacing; temperature 293 K to 298 K; Educational institutions; Electrodes; Photoconducting materials; Photodetectors; Photonics; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/IPCon.2014.6995396
  • Filename
    6995396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779369