• DocumentCode
    1779537
  • Title

    Room temperature electrically injected In0.4Ga0.6N/GaN quantum-dot visible (λ=620 nm) single photon source

  • Author

    Deshpande, Saniya ; Frost, Thomas ; Hazari, Arnab Shashi ; Bhattacharya, Pallab

  • Author_Institution
    Electr. Eng. & Comput. Sci, Univ. of Michigan- Ann Arbor, Ann Arbor, MI, USA
  • fYear
    2014
  • fDate
    12-16 Oct. 2014
  • Firstpage
    548
  • Lastpage
    549
  • Abstract
    In this work, we have obtained electrically driven single photon emission from In0.4Ga0.6N quantum dots emitting in the red spectral range (λ=620 nm) at room temperature.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; quantum dot lasers; In0.4Ga0.6N-GaN; electrical injection; electrically driven single photon emission; quantum dots; red spectral range; room temperature; temperature 293 K to 298 K; Correlation; Photoluminescence; Photonics; Plasma temperature; Quantum dots; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/IPCon.2014.6995493
  • Filename
    6995493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779537