Admittance spectroscopy for planar and across measure configuration of metal/porous silicon/Si structures

Author

Korcala, Andrzej ; Lukasiak, Zbigniew ; Zawadzka, Anna ; Plociennik, Przemyslaw ; Bala, Waclaw ; Boniewiez, Miroslaw

Author_Institution

Inst. of Phys., Nicolaus Copernicus Univ., Toruń, Poland

fYear

2014

fDate

6-10 July 2014

Firstpage

1

Lastpage

3

Abstract

In this paper two Porous Silicon (PS) measure configuration (Al/PS/p-Si/Al and Al/PS/Al) are presented. Admittance as a function of frequency and dc bias voltage were in detail analyzed. Admittance spectroscopy is a power tool in the study of semiconductors. We find out conductance and susceptance of single and multilayer structures. Moreover this diagnostic technique gives information about structural properties of investigated material.

Keywords

aluminium; electric admittance measurement; elemental semiconductors; porous semiconductors; semiconductor-metal boundaries; silicon; Al-Si-Si-Al; across measure configuration; admittance spectroscopy; conductance; dc bias voltage; metal-porous silicon-silicon structures; multilayer structures; planar measure configuration; susceptance; Admittance; Admittance measurement; Biomedical measurement; Frequency measurement; Semiconductor device measurement; Silicon; Wires; admittance spectroscopy; porous silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2014 16th International Conference on

Conference_Location

Graz

Type

conf

DOI

10.1109/ICTON.2014.6876646

Filename

6876646