• DocumentCode
    1782956
  • Title

    Simulation of p-GaN/ i-InGaN/n-GaN solar cell

  • Author

    Boudaoud, Chahrazed ; Hamdoune, Abdelkader ; Allam, Zehor

  • Author_Institution
    Unity of Res. “Mater. & Renewable Energies”, Univ. of Abou-bekr Belkaid, Tlemcen, Algeria
  • fYear
    2014
  • fDate
    26-27 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.
  • Keywords
    III-V semiconductors; gallium alloys; indium alloys; nickel alloys; power engineering computing; solar cells; wide band gap semiconductors; III-nitride material system; InxGa1-xN; SILVACO software; alloy system; direct gap; high-efficiency solar cells; illumination conditions; Charge carrier processes; Doping; Gallium nitride; Materials; Metals; Photonic band gap; Photovoltaic cells; Gallium Nitride (GaN); Indium Gallium Nitride (InGaN); Indium Nitride (InN); tandem solar cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Dielectric Materials for Photovoltaic Systems (NAWDMPV), 2014 North African Workshop on
  • Conference_Location
    Tlemcen
  • Print_ISBN
    978-1-4799-6502-1
  • Type

    conf

  • DOI
    10.1109/NAWDMPV.2014.6997614
  • Filename
    6997614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1782956