Modeling capacitive non-linearities and displacement currents of high-voltage SuperJunction MOSFET in a novel analytical switching loss model

Author

Castro, Ignacio ; Lamar, D.G. ; Roig, J. ; Bauwens, Filip

Author_Institution

Dept. de Ing. Electr., Electron., de Comput. y Sist., Univ. of Oviedo, Gijón, Spain

fYear

2014

fDate

22-25 June 2014

Firstpage

1

Lastpage

9

Abstract

This work presents a new analytical model to predict power losses and waveforms of high-voltage silicon SuperJunction (SJ) MOSFETs during hard-switching operation. This model includes original features accounting for strong capacitive non-linearities and displacement currents. Moreover, these features demand unusual extraction of electrical characteristics from regular datasheets. The high accuracy of the model is validated with experimental measurements in a buck converter by using commercial SJ MOSFETs, as well as, advanced device prototypes under development.

Keywords

MOSFET; analytical switching loss model; buck converter; capacitive non-linearities; capacitive nonlinearities currents; capacitive nonlinearities modeling; commercial SJ MOSFET; displacement currents; displacement currents modeling; electrical characteristics; hard-switching operation; high-voltage silicon superjunction MOSFET; Analytical models; Capacitance; Conferences; IP networks; Integrated circuit modeling; MOSFET; Semiconductor device modeling; SuperJunction MOSFET; analytical model; non-linear capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Modeling for Power Electronics (COMPEL), 2014 IEEE 15th Workshop on

Conference_Location

Santander

Type

conf

DOI

10.1109/COMPEL.2014.6877129

Filename

6877129