• DocumentCode
    1783442
  • Title

    X-band 10W MMIC high-gain power amplifier with up to 60% PAE

  • Author

    Sardin, David ; Reveyrand, Tibault ; Popovic, Zoya

  • Author_Institution
    Dept. of Electr., Comput., & Energy Eng. (ECEE), Univ. of Colorado at Boulder, Boulder, CO, USA
  • fYear
    2014
  • fDate
    6-7 Oct. 2014
  • Firstpage
    393
  • Lastpage
    396
  • Abstract
    This paper describes a power amplifier operating at X-band demonstrating 61% power added efficiency (PAE) at 10 GHz associated with 14W output power in CW mode. The design uses a 0.15μm GaN 3MI process from TriQuintTM. The devices operate at a peak power density of 3.8 W/mm at 10GHz with a PAE higher than 48% over a 500-MHz bandwidth. The two-stage MMIC PA has a saturated gain of 19dB at peak efficiency. The total size of the chip is 9.2 mm2.
  • Keywords
    III-V semiconductors; MIMIC; gallium compounds; microwave power amplifiers; wide band gap semiconductors; 3MI process; CW mode; GaN; MMIC PA; PAE; TriQuintTM; X-band MMIC; frequency 10 GHz; gain 19 dB; power 10 W; power 14 W; power added efficiency; power amplifier; power density; size 0.15 mum; size 9.2 mm; Gain; Gain measurement; Gallium nitride; MMICs; Microwave circuits; Power measurement; Temperature measurement; Gallium Nitride; MMIC; Power Amplifiers; X-band; high efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
  • Conference_Location
    Rome
  • Type

    conf

  • DOI
    10.1109/EuMIC.2014.6997875
  • Filename
    6997875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1783442