Electron irradiation effects on the spectrometric characteristics of GaAs detectors

Author

Sagatova, A. ; Zat´ko, B. ; Sedlackova, K. ; Necas, V. ; Fulop, M.

Author_Institution

Inst. of Nucl. & Phys. Eng., Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

The spectrometric characteristics of semi-insulating GaAs detectors irradiated by 5 MeV electrons to a dose of 24 kGy at three different dose rates (20, 40 and 80kGy/h) were studied. A similar decrease of CCE (Charge Collection Efficiency) after irradiation by 7.5% of CCE was observed with all groups of investigated detectors. On the other hand, an increase of detection efficiency after irradiation was shown. The influence of the dose rate during irradiation on spectrometric properties of detectors was not proved in chosen range of dose rate.

Keywords

III-V semiconductors; gallium arsenide; radiation detection; radiation effects; CCE; GaAs; charge collection efficiency; electron irradiation effect; electron volt energy 5 MeV; radiation absorbed dose 20 kGy; radiation absorbed dose 24 kGy; radiation absorbed dose 40 kGy; radiation absorbed dose 80 kGy; semiinsulating detector; spectrometric characteristics; Detectors; Educational institutions; Electron beams; Gallium arsenide; Radiation effects; Silicon; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998646

Filename

6998646