Surface orientation depdendence of electro-optic effects in InGaAsP for lateral PIN-junction InGaAsP photonic-wire modulators

Author

Ikku, Yuki ; Takenaka, Mitsuru ; Takagi, Shinichi

Author_Institution

Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

Electro-optic effects on InGaAsP(001), (110) and (111) have been numerically analyzed for an InGaAsP photonic-wire optical modulator with a lateral PIN-junction. We have presented that largest refractive index change can be obtained using InGaAsP(110) when TE polarized light propagates parallel to [111] direction. The amount of index change is approximately 15 % larger than that of InGaAsP(001) where electric field is vertically applied. Effects of carrier depletion have also been calculated and found carrier depletion can enhance the index change several times.

Keywords

III-V semiconductors; electro-optical effects; electro-optical modulation; indium compounds; optical materials; refractive index; InGaAsP; TE polarized light; carrier depletion; electric field; electro-optic effect; index change amount; lateral PIN-junction InGaAsP photonic-wire modulators; refractive index change; surface orientation dependence; Electric fields; Electrooptic effects; Electrooptical waveguides; Indexes; Modulation; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880549

Filename

6880549